History of semiconductor development

In 1833, the British Baradei first found that the resistance of silver sulfide with the change of temperature is different from that of general metals, under normal circumstances, the resistance of metals increases with the increase of temperature, but Baradei found that the resistance of silver sulfide materials decreases with the increase of temperature. This is the first discovery of a semiconductor phenomenon, an instantaneous voltage suppressor.

In 1839, Bechler of France found that the junction formed by the contact between the semiconductor and the electrolyte would produce a voltage under light, which was later known as the photoelectric volt effect, which was the second feature of the semiconductor found.

In 1873, Smith of the United Kingdom discovered the photoconductive effect of increased conductance of selenium crystal materials under light, which is another unique property of semiconductors. Although these four effects of semiconductors (the remnants of the jianxia Hall effect - the discovery of the four associated effects) were discovered before 1880, the term semiconductor was first used by Koenigberg and Weiss probably in 1911. It was not until December 1947 that the four characteristics of the semiconductor were summed up by Bell Laboratories.

In 1874, Braun of Germany observed that the conductivity of some sulfides is related to the direction of the applied electric field, that is, its conduction is directional, and a forward voltage is added at both ends of it, and it is conductive. If the polarity of the voltage is reversed, it will not conduct electricity, which is the rectifier effect of semiconductors, but also the third characteristic of semiconductors. In the same year, Schuster also discovered the rectification effect of copper and copper oxide, the instantaneous voltage suppressor.

Silicon wafers are cut in the laboratory

In 2015, China announced the "Made in China 2025" strategy to cultivate the semiconductor industry. To this end, Chinese local governments are competing to attract domestic and foreign semiconductor-related companies with preferential policies.

On April 11, 2018, Zhang Wei, professor of the School of Microelectronics of Fudan University, and Liu Chunsen, member of Zhou Peng's team, cut silicon wafers in the laboratory. The team of Zhang Wei and Zhou Peng has realized a subversive two-dimensional semiconductor quasi-non-volatile memory prototype device, creating a third class of memory technology. Changjiang Storage Technology, a subsidiary of China's large semiconductor company Unigunguang Group, is promoting a 3D NAND mass production project in Wuhan, Hubei province, said the sales director of Edwan Testing, "it is estimated that the mass production will be quickly achieved by the end of 2018 to 2019."

On April 24, 2018, the Japan Economic News is expected to start supplying 3D NAND flash memory chips to the market as early as the end of 2018. The oversupply of products in many industries, such as LCD panels, could also lead to a price drop in the semiconductor sector.